triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. catv tia/gain block TGA2803-EPU-SM key features and performance ? low cost 4 x 4 mm surface mount package ? 20 db flat gain ? 800 w transimpedance * ? <5pa/ ? hz equivalent input noise current * ? 1.5 db 75 w noise figure ? ultra-low distortion (45dbm ip3 typ.) ? wide bandwidth (40mhz - 1ghz) ? low dc power consumption ? single supply bias (+8v) ? proven gaas technology * includes 1:1 balun, no photodiode or auto-transformer description the triquint tga2803-epu is an ultra-linear, packaged tia/gain block which operates from 40mhz to 1000mhz. the amplifier is available in a standard 4x4 mm 20 lead mlp package. the amplifier provides flat gain along with ultra-low distortion. it also provides high output power with low dc power consumption. this amplifier is ideally suited for use in catv distribution systems or other applications requiring extremely low noise and distortion. demonstration boards are available. bottom view top view primary applications ?hfc nodes ? catv line amplifiers ? head end equipment 0 4 8 12 16 20 24 0 200 400 600 800 1000 1200 frequency (mhz) gain (db) typical 75 : gain w/external balun losses removed input referred current noise with high impedance source 75 : output toi 35 39 43 47 51 55 0 100 200 300 400 500 600 700 800 900 frequency (mhz) otoi (dbm) 0 1 2 3 4 5 6 0 200 400 600 800 1000 1200 frequency (mhz) noise current(pa/rt(hz)) tga 2803
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2803-EPU-SM table ii dc specifications symbol parameter typ unit v dd bias supply voltage 8 v i dd bias supply current 350 ma v g1 gate 1 voltage (pin 19) 0.90 v v g2 gate 2 voltage (pin 7) 2.66 v v out1 rf output 1 voltage (pin 14/15) v dd v v out2 rf output 2 voltage (pin 11/12) v dd v table i maximum ratings 1/ symbol parameter min max units notes v dd bias supply voltage 0 15 v i dd bias supply current 500 ma 1/ 2 / p in rf input power 77 dbmv 3/ t assy assembly temperature (30 seconds max) 300 c t stg storage temperature -65 150 c t case package operating temperature (heat slug) -40 110 c 1/ these values reflect maximum operable values for this device. operating above the recommended values may directly affect mttf. 2/ total current 3/ total input power
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table iii rf specifications 1/ t a =25 c, v dd =8v symbol parameter min typ max units note bw bandwidth 40 870 mhz s 21 power gain 20 db 2/ gf gain flatness 0.3 db 2/ nf noise figure 1.5 db 2/ tz transimpedance 800 w i n equivalent input current noise 5 pa/rthz 3/ ctb composite triple-beat distortion -72 dbc 5/ cso composite second-order distortion -75 dbc 5/ ip 3 two-tone, third-order intercept (450 mhz) 46 dbm irl input return loss 16 db orl output return loss 20 db i d drain current 350 ma 4/ p1db output power at p1db (450 mhz) 27 dbm 1/ using electrical application circuit on pg. 8 2/ 1:1 balun losses have been removed from the measurement 3/ measured with open-circuited input 4/ reducing drain current and voltage will degrade linearity of device 5/ at +40dbmv/channel output, 82 channels flat, 40-550 mhz TGA2803-EPU-SM
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical measured s-parameters (75 : ) using application circuit (includes effects of external baluns) -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 0 200 400 600 800 1000 1200 frequency (mhz) s11(db) 0 4 8 12 16 20 24 0 200 400 600 800 1000 1200 frequency (mhz) s21 (db) -40 -35 -30 -25 -20 -15 -10 -5 0 0 200 400 600 800 1000 1200 frequency (mhz) s12 (db) -40 -35 -30 -25 -20 -15 -10 -5 0 0 200 400 600 800 1000 1200 frequency (mhz) s22 (db) TGA2803-EPU-SM
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 0 1 2 3 4 5 6 0 200 400 600 800 1000 1200 frequency (mhz) noise current(pa/rt(hz)) TGA2803-EPU-SM typical measured performance using application circuit (includes effects of external baluns) 35 39 43 47 51 55 0 100 200 300 400 500 600 700 800 900 frequency (mhz) otoi (dbm) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 200 400 600 800 1000 1200 frequency(mhz) noise figure(db) input balun losses removed
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical specifications TGA2803-EPU-SM
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. pinout top side dot indicates pin 1 bottom side pin description pin description 1 rf input 1 11 rf output 2 2 rf input 1 12 rf output 2 3 gnd 13, 21 gnd 4 rf input 2 14 rf output 1 5 rf input 2 15 rf output 1 6nc 16nc 7 vg2 (optional) 2/ 17 vdd (choked) 8vdd 18vdd 9 vdd (choked) 19 vg1 (optional) 2/ 10 isense 1 / 20 nc TGA2803-EPU-SM tga 2803 1 / bias current monitor: i bias = v pin 10 / w 2 / vg1 and vg2 are internally biased but are user adjustable. vg1 adjusts dc current versus linearity performance. to a lesser extent vg2 varies gain and linearity.
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. recommended electrical assembly component description ref description c1 0.01 m f capacitor c2 0.01 m f capacitor c3 470pf capacitor c4 470pf capacitor c5 270pf capacitor c6 270pf capacitor l1 820nh inductor l2 820nh inductor t1 balun 1/ t2 balun 1/ 1/ balun performance impacts amplifier return losses and gain. best performance can be achieved by winding 34 or 36 gauge bifilar wire around a small binocular core made from low-loss magnetic material. suitable wire may be obtained from mws wire industries. core vendors include ferronics, fairrite, tdk, and micrometals. alternatively, off-the-shelf baluns can be purchased from a number of vendors including mini-circuits (adtl1-18-75), m/a-com (etc1-1-13), and pulse engineering (cx2071). TGA2803-EPU-SM +8v rf out +8v tga 2803 1 2 3 4 5 15 14 13 12 11 678910 20 19 18 17 16 rf in t1 t2 l1 c2 c3 c4 c5 c6 c1 l2
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2803-EPU-SM component description ref description c1 0.01 m f capacitor c2 0.01 m f capacitor c3 470pf capacitor c4 470pf capacitor c5 270pf capacitor c6 270pf capacitor l1 820nh inductor l2 820nh inductor t1 balun 1/ t2 balun 1/ pd broadband photodiode 2/ 1/ balun performance impacts amplifier return losses and gain. best performance can be achieved by winding 34 or 36 gauge bifilar wire around a small binocular core made from low-loss magnetic material. suitable wire may be obtained from mws wire industries. core vendors include ferronics, fairrite, tdk, and micrometals. alternatively, off-the-shelf baluns can be purchased from a number of vendors including mini-circuits (adtl1-18-75), m/a-com (etc1-1-13), and pulse engineering (cx2071). 2/ emcore 2609c broadband photodiode module is recommended. the module includes a 4:1 impedance transformer. recommended electro-optical assembly +8v single-mode fiber pd -15v rfout +8v rf out tga 2803 1 2 3 4 5 15 14 13 12 11 67 8 9 10 20 19 18 17 16 t1 t2 l1 c2 c3 c4 c5 c6 c1 l2
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